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NTZD3152P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 20
18
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
T J = 25 ° C
? 1.0
m A
V DS = ? 16 V
T J = 125 ° C
? 2.0
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 4.5 V
" 2.0
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.45
? 1.9
? 1.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 430 mA
0.5
0.9
W
V GS = ? 2.5 V, I D = ? 300 mA
V GS = ? 1.8 V, I D = ? 150 mA
0.6
1.0
1.2
2.0
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 430 mA
1.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
105
175
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 16 V
15
10
30
20
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 215 mA
1.7
0.1
0.3
0.4
2.5
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 215 mA, R G = 10 W
12
35
19
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 350 mA
T J = 25 ° C
? 0.8
? 1.2
V
Reverse Recovery Time
t RR
V GS = 0 V, dI SD /dt = 100 A/ m s,
I S = ? 350 mA
13
ns
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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